High Voltage Lateral Bidirectional Super Junction IGBT with Fast Turn-off Speed

被引：0

作者：

Zhang, Jinping ^{[1
]}

Zhao, Qian ^{[1
]}

Wang, Kang ^{[1
]}

Zhao, Yang ^{[1
]}

Li, Zehong ^{[1
]}

Li, Zhaoji ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel lateral bidirectional super junction IGBT (LBSJ-IGBT) is proposed for the first time, which features a folded SJ structure with symmetrical N-buffer layer in the drift region. The relationships of breakdown voltage (BV), on-state voltage drop (V-on) as well as turn-off characteristics with device parameters are analyzed and simulated. The results show that the LBSJ-IGBT with BV of 668V, V-on of 1.40V@J(on)=100A/cm(2), turn-off loss (E-of) of 3.62mJ/cm(2) and fall time (t(f)) of 14ns in both directions is obtained only with the cell pitch of 24 mu m. To the best of our knowledge, this is the first result to demonstrate a >600V high speed lateral bidirectional IGBT device.

引用

页码：335 / 337

页数：3

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