Collector-gate-controlled lateral IGBT for reduction of on-state voltage and turn-off loss

被引：2

作者：

Tani, Kazuki ^{[1
]}

Hara, Kenji ^{[1
]}

Furukawa, Tomoyasu ^{[1
]}

Sakurai, Kenji ^{[2
]}

Utsumi, Tomoyuki ^{[2
]}

机构：

[1] Hitachi Ltd, Res & Dev Grp, Hitachi, Ibaraki, Japan

[2] Hitachi Power Semicond Device, Design Dev Div, Dept 2, Hitachi, Ibaraki, Japan

来源：

2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2022年

关键词：

Lateral IGBT; additional gate; dynamic carrier control;

D O I：

10.1109/ISPSD49238.2022.9813606

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A collector-gate controlled lateral IGBT (CG-LIGBT) with an additional gate called a collector gate (CG) was developed for reducing both the on-state voltage drop (V-on) and turn-off energy loss (E-off) compared to the conventional LIGBT. Carrier density in the CG-LIGBT can be dynamically regulated by controlling the N-MOSFET, which is newly added in the collector region, with the CG. The enhanced hole injection due to an additional P-body region in the collector enables a 26% reduction of the V-on compared to the conventional LIGBT. In addition, the E-off is reduced by 63% with CG control compared to without CG control because the carrier density is decreased by turning on the CG just before turning off the CG-LIGBT. The device can also be fabricated without any additional process compared to the conventional LIGBT.

引用

页码：69 / 72

页数：4

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