SiC vs. Si - Evaluation of Potentials for Performance Improvement of Power Electronics Converter Systems by SiC Power Semiconductors

被引：18

作者：

Biela, J. ^{[1
]}

Schweizer, M. ^{[1
]}

Waffler, S. ^{[1
]}

Wrzecionko, B. ^{[1
]}

Kolar, J. W. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Power Elect Syst Lab, Zurich, Switzerland

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

DC-DC Converter; PFC Converter; SiC JFETs; Optimisation;

D O I：

10.4028/www.scientific.net/MSF.645-648.1101

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Switching devices based on wide band gap materials as SiC offer a significant performance improvement on the switch level compared to Si devices. A well known example are SiC diodes employed e.g. in PFC converters. In this paper, the impact on the system level performance, i.e. efficiency/power density, of a PFC and of a DC-DC converter resulting with the new SiC devices is evaluated based on analytical optimisation procedures and prototype systems. There, normally-on JFETs by SiCED and normally-off JFETs by SemiSouth are considered.

引用

页码：1101 / 1106

页数：6

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