Evaluation of the Switching Performance of Si, SiC and GaN Power Transistors

The paper deals with the investigation of the switching performance of the power transistors, while the focus is given on the comparisons of the perspective switching devices. CoolMOS Si transistor, SiC transistor and GaN transistor have been evaluated within hard-switching mode. For this purpose specific testing device was designed and adapted to switching requirements of individual structures. Switching performance was identified in the way of power loss identification during the commutation mode, whereby parametric evaluation in dependency on switching frequency and power load was done. The results shows how efficient transistor structures are, if given parameters from the target application shall be considered.