Advanced SiC and GaN Power Electronics for Automotive Systems

被引:0
|
作者
Kanechika, Masakazu [1 ]
Uesugi, Tsutomu [1 ]
Kachi, Tetsu [1 ]
机构
[1] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A power switching device is one of the key elements to determine the performance of hybrid electric vehicles (HEVs) and pure electric vehicles (EVs). Recently, the power devices using wide-bandgap semiconductors, such as SiC and GaN, have been intensively developed for the future HEVs and EVs. In this paper, we review a role of the power devices in these automotive systems, the required device characteristics, and the recent status of SiC and GaN power devices.
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页数:4
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