SiC versus Si-Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors

被引：602

作者：

Biela, Juergen ^{[1
]}

Schweizer, Mario ^{[1
]}

Waffler, Stefan ^{[1
]}

Kolar, Johann W. ^{[1
]}

机构：

[1] ETH, CH-8092 Zurich, Switzerland

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2011年 / 58卷 / 07期

关键词：

AC-DC power converters; DC-DC power converters; SiC power semiconductor switches; IMPACT; BUCK;

D O I：

10.1109/TIE.2010.2072896

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.

引用

页码：2872 / 2882

页数：11

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