High temperature design and testing of a DC-DC power converter with Si and SiC devices

被引：0
|
作者：
Ray, B [1 ]
Spyker, RL [1 ]
机构：
[1] Bloomsburg Univ Penn, Bloomsburg, PA 17815 USA
来源：
CONFERENCE RECORD OF THE 2004 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4: COVERING THEORY TO PRACTICE | 2004年
关键词：
high temperature; silicon carbide; dc-dc converter;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performance of a 2 M, 40 kHz, 270 V/500 V boost dc-dc power converter as a function of temperature is reported for the following four power semiconductor device combinations: Si IGBT/Si diode, Si IGBT/SiC diode, Si MOSFET/Si diode, and Si MOSFET/SiC diode. The test results show the possibility of designing 200degreesC power converters with Si MOSFET, SiC Schottky, carefully selected soft-switching circuit topology, and devices with optimized packaging.
引用
收藏
页码：1261 / 1266
页数：6
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