Impact of SiC Components on the EMC behaviour of a Power Electronics Converter

被引：0
|
作者：
Rondon, Eliana [1 ]
Morel, Florent [1 ]
Vollaire, Christian [1 ]
Schanen, Jean-Luc
机构：
[1] Univ Lyon, Lab Ampere CNRS UMR 5005, Ecole Cent Lyon, 36 Ave Guy de Collongue, F-69134 Ecully, France
来源：
2012 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2012年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the EMC behaviour of a switching cell is studied in a standardized environment, using both experiments and simulations. The environment model has been validated separately. The EMC emission using SiC JFET and Si MOSFET are compared. With the SiC JFET the simulation study shows a good agreement with the experiment up to 20MHz while with the Si MOSFET the validity domain of the model is less than 500kHz due to the simplistic model included in the SABER library. The experimental study shows that the EMC perturbations measured at the LISN are 10dB larger with the SiC JFET than with the Si MOSFET at a frequency range from 200kHz to 4MHz.
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收藏
页码：4411 / 4417
页数：7
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