A single crystalline strontium titanate thin film transistor

被引：4

作者：

Uchida, Kosuke ^{[1
]}

Yoshikawa, Akira ^{[1
]}

Koumoto, Kunihito ^{[1
]}

Kato, Takeharu ^{[2
]}

Ikuhara, Yuichi ^{[2
,3
]}

Ohta, Hiromichi ^{[1
,4
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Japan Fine Ceram Ctr, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[3] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, Tokyo 1138656, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 09期

关键词：

FIELD-EFFECT TRANSISTOR; GATE INSULATOR; MOBILITY; SRTIO3;

D O I：

10.1063/1.3407568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio >10(5), subthreshold swing similar to 2.1 V decade(-1), and field-effect mobility similar to 0.8 cm(2) V-1 s(-1). This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3407568]

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页数：3

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