A single crystalline strontium titanate thin film transistor

We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio >10(5), subthreshold swing similar to 2.1 V decade(-1), and field-effect mobility similar to 0.8 cm(2) V-1 s(-1). This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3407568]