Dielectric dispersion in barium strontium titanate thin film capacitors with iridium electrodes

被引：5

作者：

Balu, V

Chen, TS

Katakam, S

Lee, JH

White, B

Zafar, S

Jiang, B

Zurcher, P

Jones, RE

Lee, JC

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

[2] Motorola Inc, Mat Res & Strateg Technol, Austin, TX 78721 USA

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

dielectric dispersion; frequency; DRAM; BST; iridium interface; multi-layer structures;

D O I：

10.1080/10584589808202059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dielectric dispersion or relaxation results in a frequency dependent loss in capacitance. This reduces the charge storage capacity under DRAM operating conditions. In this work, the dielectric dispersion behavior of Barium Strontium Titanate (BST) thin films (compositions: Ba0.5Sr0.5TiO3 and Ba0.4Sr0.6TiO3) deposited by RF magnetron sputtering on iridium bottom electrodes was investigated. Using capacitance-frequency measurements on BST films of various thicknesses, electrode-dielectric interface effects were separated from the bulk of the dielectric film. For the BST films used in this study, the dispersion in Ba0.4Sr0.6TiO3 films was interface dominated while that in Ba0.5Sr0.5TiO3 was bulk controlled. Various multi-layered BST capacitors with combinations of the above compositions and different individual layer thicknesses were studied to verify the accuracy of the model developed for the films of each composition.

引用

页码：155 / 166

页数：12

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