Fano resonance study in impurity photocurrent spectra of bulk GaAs and GaAs quantum wells doped with shallow donors

被引：9

作者：

Aleshkin, V. Ya. ^{[1
]}

Antonov, A. V. ^{[1
]}

Gavrilenko, L. V. ^{[1
]}

Gavrilenko, V. I. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.75.125201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of theoretical and experimental study of the impurity photocurrent peaks in the spectral region corresponding to the longitudinal optical phonon energy in bulk GaAs and GaAs quantum wells doped with silicon are presented. The general expression to describe these impurity photocurrent peaks is derived. It is shown that the suggested theory adequately describes the impurity photocurrent peaks observed in bulk GaAs. We demonstrate that the photocurrent peak width in a quantum well structure is greater than that in a bulk semiconductor.

引用

页数：9

共 50 条

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[2] Fano resonances in the impurity photocurrent spectra of GaAs samples and an InGaAs/GaAsP quantum-well heterostructure doped with shallow acceptors
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