Fano resonance in the impurity photoconductivity spectrum of InP doped with shallow donors

被引：4

作者：

Aleshkin, V. Ya. ^{[1
]}

Antonov, A. V. ^{[1
]}

Gavrilenko, V. I. ^{[1
]}

Gavrilenko, L. V. ^{[1
]}

Zvonkov, B. N. ^{[2
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

[2] Lobachevsky State Univ Nizhni Novgorod, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS OF THE SOLID STATE | 2008年 / 50卷 / 07期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063783408070032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The Fano resonances in the impurity photoconductivity spectra of n-InP are investigated theoretically and experimentally. It is shown that the calculations describe the experimental data with an accuracy of up to 20%.

引用

页码：1211 / 1214

页数：4

共 50 条

[1] Fano resonance in the impurity photoconductivity spectrum of InP doped with shallow donors
V. Ya. Aleshkin
A. V. Antonov
V. I. Gavrilenko
L. V. Gavrilenko
B. N. Zvonkov
[J]. Physics of the Solid State, 2008, 50 : 1211 - 1214
[2] Polarization Dependence of Fano Resonances in Impurity Photoconductivity of Quantum Wells Doped with Shallow Donors
Aleshkin, V. Ya.
Antonov, A. V.
Zholudev, M. S.
Panevin, V. Yu.
Vorob'ev, L. E.
Firsov, D. A.
Vasil'ev, A. P.
Zhukov, A. E.
[J]. PHYSICS OF THE SOLID STATE, 2011, 53 (06) : 1253 - 1262
[3] Polarization dependence of Fano resonances in impurity photoconductivity of quantum wells doped with shallow donors
V. Ya. Aleshkin
A. V. Antonov
M. S. Zholudev
V. Yu. Panevin
L. E. Vorob’ev
D. A. Firsov
A. P. Vasil’ev
A. E. Zhukov
[J]. Physics of the Solid State, 2011, 53 : 1253 - 1262
[4] Fano resonances in the impurity photoexcitation spectra of semiconductors doped with shallow donors
Aleshkin, VY
Antonov, AV
Gavrilenko, LV
Gavrilenko, VI
[J]. JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2005, 101 (04) : 708 - 716
[5] Fano resonances in the impurity photoexcitation spectra of semiconductors doped with shallow donors
V. Ya. Aleshkin
A. V. Antonov
L. V. Gavrilenko
V. I. Gavrilenko
[J]. Journal of Experimental and Theoretical Physics, 2005, 101 : 708 - 716
[6] Fano resonance study in impurity photocurrent spectra of bulk GaAs and GaAs quantum wells doped with shallow donors
Aleshkin, V. Ya.
Antonov, A. V.
Gavrilenko, L. V.
Gavrilenko, V. I.
[J]. PHYSICAL REVIEW B, 2007, 75 (12):
[7] Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors
Aleshkin, V. Ya
Burdeiny, D. I.
Gavrilenko, L. V.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (08)
[8] RESONANCE PHOTOCONDUCTIVITY IN FE-DOPED INP
LOOK, DC
KREITMAN, MM
[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 311 - 311
[9] RESONANCE PHOTOCONDUCTIVITY IN FE-DOPED INP
LOOK, DC
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (02) : 237 - 240
[10] Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors (vol 25, 085005, 2010)
Aleshkin, V. Ya
Burdeiny, D. I.
Gavrilenko, L. V.
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (04)

← 1 2 3 4 5 →