Fano resonances in the impurity photoexcitation spectra of semiconductors doped with shallow donors

被引：6

作者：

Aleshkin, VY ^{[1
]}

Antonov, AV ^{[1
]}

Gavrilenko, LV ^{[1
]}

Gavrilenko, VI ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2005年 / 101卷 / 04期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.2131940

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theory describing the photoexcited current peaks in the spectral region corresponding to the energies of longitudinal optical phonons in semiconductors doped with shallow donors is developed. The experimental data available for n-GaAs are in good agreement with the results obtained using the proposed theory. (c) 2005 Pleiades Publishing, Inc.

引用

页码：708 / 716

页数：9

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