Theory of the Fano resonance in impurity excitation spectra of p-GaAs

被引：0
|
作者：
V. Ya. Aleshkin
D. I. Burdeiny
M. S. Zholudev
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
来源：
Physics of the Solid State | 2011年 / 53卷
关键词：
GaAs; Optical Phonon; Fano Resonance; Resonance Curve; Acceptor State;
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摘要：
The features observed in the impurity photoconductivity spectra of gallium arsenide doped with shallow acceptors have been described theoretically. The features are caused by the interaction of holes with polar optical phonons. The Fano resonances associated with both the ground and excited acceptor states have been considered. The calculated widths of the resonances are in agreement with available experimental data.
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页码：1176 / 1185
页数：9
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