Fano resonance study in impurity photocurrent spectra of bulk GaAs and GaAs quantum wells doped with shallow donors

被引：9
|
作者：
Aleshkin, V. Ya. [1 ]
Antonov, A. V. [1 ]
Gavrilenko, L. V. [1 ]
Gavrilenko, V. I. [1 ]
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.75.125201
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of theoretical and experimental study of the impurity photocurrent peaks in the spectral region corresponding to the longitudinal optical phonon energy in bulk GaAs and GaAs quantum wells doped with silicon are presented. The general expression to describe these impurity photocurrent peaks is derived. It is shown that the suggested theory adequately describes the impurity photocurrent peaks observed in bulk GaAs. We demonstrate that the photocurrent peak width in a quantum well structure is greater than that in a bulk semiconductor.
引用
收藏
页数：9
相关论文
共 50 条
  • [21] ABSORPTION-SPECTRA AND TRANSVERSE PHOTOCURRENT SPECTRA OF GAAS/ALGAAS MULTIPLE QUANTUM-WELLS
    TENG, D
    XU, ZY
    ZHUANG, WH
    WANG, SW
    [J]. CHINESE PHYSICS, 1990, 10 (04): : 1041 - 1047
  • [22] MAGNETO-OPTICAL STUDIES OF SHALLOW DONORS IN SELECTIVELY DOPED GAAS-GAALAS MULTIPLE QUANTUM WELLS
    HUANT, S
    GRYNBERG, M
    MARTINEZ, G
    ETIENNE, B
    LAMBERT, B
    REGRENY, A
    [J]. SOLID STATE COMMUNICATIONS, 1988, 65 (12) : 1467 - 1472
  • [23] Calculation of the parameters for the Fano resonance in the impurity photocurrent spectrum of semiconductors doped with hydrogen-like donors
    Aleshkin, V. Ya
    Burdeiny, D. I.
    Gavrilenko, L. V.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (08)
  • [24] Negative peaks in photocurrent spectra of thick barrier GaAs/AlAs multiple quantum wells
    Kawasaki, K
    Imazawa, W
    Kawashima, K
    Fujiwara, K
    Hosoda, M
    Tominaga, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) : 3338 - 3341
  • [25] New concept for the reduction of impurity scattering in remotely doped GaAs quantum wells
    Friedland, KJ
    Hey, R
    Kostial, H
    Klann, R
    Ploog, K
    [J]. PHYSICAL REVIEW LETTERS, 1996, 77 (22) : 4616 - 4619
  • [26] PHOTOLUMINESCENCE SPECTRA OF SHALLOW ACCEPTORS IN GAAS-(GA,AL)AS QUANTUM WELLS
    OLIVEIRA, LE
    LOPEZGONDAR, J
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (26) : 2751 - 2753
  • [27] Femtosecond reflections of bulk GaAs and GaAs/AlGaAs multiple quantum wells
    Li, WL
    Qiu, ZR
    Peng, WJ
    Huang, XG
    Zhou, JY
    Yu, ZX
    [J]. CHINESE PHYSICS LETTERS, 1996, 13 (03) : 237 - 240
  • [28] Femtosecond reflection of bulk GaAs and GaAs/AlGaAs multiple quantum wells
    Li, W
    Peng, W
    Qiu, Z
    Yu, Z
    [J]. ULTRAFAST PROCESSES IN SPECTROSCOPY, 1996, : 269 - 274
  • [29] Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells
    [J]. 1858, American Institute of Physics Inc. (87):
  • [30] Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells
    Gopal, AV
    Kumar, R
    Vengurlekar, AS
    Bosacchi, A
    Franchi, S
    Pfeiffer, LN
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (04) : 1858 - 1862
12345