Femtosecond reflections of bulk GaAs and GaAs/AlGaAs multiple quantum wells

被引：2
|
作者：
Li, WL
Qiu, ZR
Peng, WJ
Huang, XG
Zhou, JY
Yu, ZX
机构：
来源：
CHINESE PHYSICS LETTERS | 1996年 / 13卷 / 03期
关键词：
D O I：
10.1088/0256-307X/13/3/022
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present room temperature femtosecond reflection studies on the photocarrier dynamics of GaAs and GaAs/AlGaAs multiple quantum wells (MQW). A rising wing with a time constant of about 5 ps and an increased amplitude per carrier is observed for the MQW sample at carrier densities lower than 5 x 10(11) cm(-2). This phenomenon is explained as the saturation of the excitonic transitions.
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收藏
页码：237 / 240
页数：4
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