A passivation study for low dark current InGaAs/InP PIN diode

被引：0
|
作者：
Kumar, VN [1 ]
Kishore, KVSR [1 ]
Rao, PRS [1 ]
Das Gupta, A [1 ]
Das Gupta, N [1 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Low dark current InGaAs/InP mesa structured PIN diode detectors for operation at 1.1-1.7 mu m have been fabricated. Dark current densities of 16 mu A/cm(2) were achieved. The diodes have been passivated by polyimide, SiO2 and SiN layers and their effects on the dark current were studied. It was conclusively proved that polyimide passivation had the best results in terms of low dark current, reproducibility and longterm stability of the device.
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页码：617 / 620
页数：4
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