InGaAs/InP PIN PHOTODIODE.

被引：0
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作者：
Terauchi, Hitoshi
Yamaguchi, Akira
Yamabayashi, Naoyuki
Nishizawa, Hideaki
Kuhara, Yoshiki
Kuroda, Masataka
Iguchi, Shin-ichi
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来源：
Sumitomo Electric Technical Review | 1986年 / 25期
关键词：
SEMICONDUCTOR DIODES; PHOTODIODE;
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摘要：
The InGaAs/InP PIN-Photodiodes were developed for application in long-wavelength optical communications. The photosensitive layer is made of high-purity InGaAs grown by the LPE method. The p-n junction with 100 mu m diameter is formed by a selective area diffusion of zinc. The activation energy for an average lifetime has been obtained as 0. 85 ev from life tests utilizing three different temperature conditions. Using the above parameter, we estimate that the average lifetime of the present photodiodes is 10**7 hours at room temperature.
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页码：89 / 96
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