A passivation study for low dark current InGaAs/InP PIN diode

被引：0

作者：

Kumar, VN ^{[1
]}

Kishore, KVSR ^{[1
]}

Rao, PRS ^{[1
]}

Das Gupta, A ^{[1
]}

Das Gupta, N ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low dark current InGaAs/InP mesa structured PIN diode detectors for operation at 1.1-1.7 mu m have been fabricated. Dark current densities of 16 mu A/cm(2) were achieved. The diodes have been passivated by polyimide, SiO2 and SiN layers and their effects on the dark current were studied. It was conclusively proved that polyimide passivation had the best results in terms of low dark current, reproducibility and longterm stability of the device.

引用

页码：617 / 620

页数：4

共 50 条

[11] Passivation of InGaAs/InP heterostructures
Driad, R
Lu, ZH
McKinnon, WR
Laframboise, S
McAlister, SP
Poole, PJ
Raymond, S
Charbonneau, S
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 227 - 238
[12] LOW DARK CURRENT INGAAS PIN PHOTODIODES GROWN BY MOLECULAR-BEAM EPITAXY
CINGUINO, P
GENOVA, F
RIGO, C
STANO, A
ELECTRONICS LETTERS, 1985, 21 (04) : 139 - 140
[13] Low-dark current 1024x1280 InGaAs PIN arrays
Yuan, Ping
Chang, James
Boisvert, Joseph C.
Karam, Nasser
INFRARED TECHNOLOGY AND APPLICATIONS XL, 2014, 9070
[14] LOW DARK CURRENT InGaAs PIN PHOTODIODES GROWN BY MOLECULAR BEAM EPITAXY.
Cinguino, P.
Genova, F.
Rigo, C.
Stano, A.
CSELT Technical Reports, 1985, 13 (02): : 113 - 115
[15] Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche Diode
Tosi, Alberto
Sanzaro, Mirko
Calandri, Niccolo
Ruggeri, Alessandro
Acerbi, Fabio
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 82 - 85
[16] Low dark current InGaAs(P)/InP p-i-n photodiodes
Chen, YW
Hsu, WC
Hsu, RT
Wu, YH
Chen, YJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
[17] Low dark current InGaAs(P)/InP p-i-n photodiodes
Chen, YW
Hsu, WC
Chen, YJ
PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
[18] Low dark current InGaAs(P)/InP p-i-n photodiodes
Chen, Yen-Wei
Hsu, Wei-Chou
Hsu, Rong-Tay
Wu, Yue-Huei
Chen, Yeong-Jia
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4249 - 4252
[19] W-band InGaAs/InP PIN diode monolithic integrated switches
Alekseev, E
Pavlidis, D
Dickmann, J
Hackbarth, T
GAAS IC SYMPOSIUM - 18TH ANNUAL, TECHNICAL DIGEST 1996, 1996, : 285 - 288
[20] Reliability of InGaAs/InP HBTs with InP passivation structure
Yamabi, R
Kotani, K
Kawasaki, T
Yanagisawa, M
Yaegassi, S
Yano, H
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 122 - 125

← 1 2 3 4 5 →