Floating-gate techniques for assessing mismatch

被引:0
|
作者
Minch, BA [1 ]
机构
[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
I discuss the importance of capacitor matching in the context of using charge stored on floating-gate MOS (FGMOS) transistors to compensate for transistor mismatch in analog circuits. I describe a simple technique that only involves static measurements for assessing the relative mismatch between capacitors. I also show experimental measurements of capacitor mismatch for small capacitors fabricated in 1.2-mu m and 0.35-mu m double-poly it n-well CMOS process that are commonly available.
引用
收藏
页码:385 / 388
页数:4
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