Floating-gate techniques for assessing mismatch

被引：0

作者：

Minch, BA ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

ISCAS 2000: IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS - PROCEEDINGS, VOL IV: EMERGING TECHNOLOGIES FOR THE 21ST CENTURY | 2000年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

I discuss the importance of capacitor matching in the context of using charge stored on floating-gate MOS (FGMOS) transistors to compensate for transistor mismatch in analog circuits. I describe a simple technique that only involves static measurements for assessing the relative mismatch between capacitors. I also show experimental measurements of capacitor mismatch for small capacitors fabricated in 1.2-mu m and 0.35-mu m double-poly it n-well CMOS process that are commonly available.

引用

页码：385 / 388

页数：4

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