A single poly-Si gate-all-around junctionless fin field-effect transistor for use in one-time programming nonvolatile memory

被引：1

作者：

Yeh, Mu-Shih ^{[1
]}

Wu, Yung-Chun ^{[1
]}

Liu, Kuan-Cheng ^{[1
]}

Chung, Ming-Hsien ^{[1
]}

Jhan, Yi-Ruei ^{[1
]}

Hung, Min-Feng ^{[1
]}

Chen, Lun-Chun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

关键词：

Single poly Si; Gate all around; Junctionless; Fin field effect transistor; One time programming; Nonvolatile memory; Three-dimensional; Flash memory;

D O I：

10.1186/1556-276X-9-603

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 10(4) s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.

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页数：5

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