Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel

被引：23

作者：

Chen, Hung-Bin ^{[1
,2
]}

Chang, Chun-Yen ^{[1
,2
]}

Lu, Nan-Heng ^{[3
]}

Wu, Jia-Jiun ^{[1
,2
]}

Han, Ming-Hung ^{[1
,2
]}

Cheng, Ya-Chi ^{[3
]}

Wu, Yung-Chun ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 07期

关键词：

Gate-all-around (GAA); junctionless (JL); thin-film transistor; ultrathin channel; TRANSISTORS;

D O I：

10.1109/LED.2013.2262018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates for the first time junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with ultrathin channels (2 nm). The subthreshold swing is 61 mV/decade and the ON/OFF current ratio is close to 10(8) because of the excellent gate controllability and ultrathin channel. The JL-GAA TFTs have a low drain-induced barrier lowering value of 6 mV/V, indicating greater suppression of the short-channel effect than in JL-planar TFTs. The cumulative distribution of electrical parameters in JL-GAA is small. Therefore, the proposed JL-GAA TFTs of excellent device characteristics along with simple fabrication are highly promising for future system-on-panel and system-on-chip applications.

引用

页码：897 / 899

页数：3

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