Study of Ohmic Contact Formation on AlGaN/GaN HEMT with AlN spacer on Silicon Substrate

被引：0

作者：

Gerbedoen, J-C. ^{[1
]}

Soltani, A. ^{[1
]}

Mattalah, M. ^{[1
]}

Telia, A. ^{[2
]}

Troadec, D. ^{[1
]}

Abdallah, B. ^{[3
]}

Gautron, E. ^{[3
]}

De Jaeger, J-C. ^{[1
]}

机构：

[1] USTL, IEMN, CNRS, UMR 8520, Ave Poincare, F-59652 Villeneuve Dascq, France

[2] Univ Mentouri, Dept Elect, LMI, Constantine, Algeria

[3] Univ Nantes, Inst Mat Jean Rouxel IMN UMR 6502, F-44322 Nantes, France

来源：

2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年

关键词：

GaN; Ohmic contact; Conduction mechanism; HEMTs;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper deals with the analyse of ohmic contact formation on GaN, AlGaN/GaN and AlGaN/AIN/GaN. TEM measurement was carried out on these last structures to explain the ohmic contact formation for Ti and Ti/Al contact. The difficulties to achieve an ohmic contact on AlGaN/AlN/GaN structures leads to etch the AlGaN barrier to obtain rapidly and easily an ohmic behaviour. At last, it is shown that TLM and TLTLM are necessary to characterise the ohmic contact when an alloy is formed under the metallisation. In this case, the transport is governed by tunnel effect assisted by field effect (FE) via deep levels.

引用

页码：136 / +

页数：2

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