Passivation of AlGaN/GaN HEMT by Silicon Nitride

被引：4

作者：

Dayal, S. ^{[1
]}

Kumar, Sunil ^{[1
]}

Kumar, Sudhir ^{[1
]}

Arora, H. ^{[1
]}

Laishram, R. ^{[1
]}

Chaubey, R. K. ^{[1
]}

Sehgal, B. K. ^{[1
]}

机构：

[1] Solid State Phys Lab, Delhi 110054, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES | 2014年

关键词：

GaN HEMT; Silicon nitride; NH3 Plasma Pretreatment; Passivation; GAN;

D O I：

10.1007/978-3-319-03002-36

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here the passivation of AlGaN/GaN HEMT devices with silicon nitride films deposited by inductively coupled plasma chemical vapour deposition (ICPCVD). With low power ammonia plasma pretreatment and silicon nitride film passivation having refractive index of 2.01 and 2000 A(0) thickness, 80 to 95% current recovery and minimum knee walkout have been achieved on different samples.

引用

页码：141 / 143

页数：3

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