Characteristics of AlGaN/GaN HEMT devices with SiN passivation

被引：0

作者：

Lee, JS ^{[1
]}

Vescan, A ^{[1
]}

Wieszt, A ^{[1
]}

Dietrich, R ^{[1
]}

Leier, H ^{[1
]}

Kwon, YS ^{[1
]}

机构：

[1] DaimlerChrysler AG, Res & Technol, D-89013 Ulm, Germany

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates the effect of surface passivation on the DC and L-band power characteristics of doped AlGaN/GaN HEMT devices. Drain current and transconductance of AlGaN/GaN increase from 610mA/mm to 690mA/mm and 150mS/mm to 170mS/mm, whereas other measurements such as Hall and TLM show little change with SiN passivation. Output power dramatically increases from 0.59W/mm to 1.45mW/mm. The influence or me SiN layer on the bias dependence of the RF-output power is investigated.

引用

页码：381 / 384

页数：4

共 50 条

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