AlGaN/AlN/GaN high-power microwave HEMT

被引：394
|
作者：
Shen, L [1 ]
Heikman, S
Moran, B
Coffie, R
Zhang, NQ
Buttari, D
Smorchkova, IP
Keller, S
DenBaars, SP
Mishra, UK
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 10期
关键词：
GaN; heterojunctions; microwave power FETs; MODFETs;
D O I：
10.1109/55.954910
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a novel heterojunction AlGaN/AlN/GaN high- electron mobility transistor (KNIT) is discussed. Contrary to normal HEMTs, the insertion of the very thin AIN interfacial layer (similar to1 nm) maintains high mobility at high sheet charge densities by increasing the effective DeltaE(C) and decreasing alloy scattering. Devices based on this structure exhibited good DC and RF performance. A high peak current 1 A/mm at V-GS = 2 V was obtained and an output power density of 8.4 W/mm with a power added efficiency of 28% at 8 GHz was achieved.
引用
收藏
页码：457 / 459
页数：3
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