High performance AlGaN/GaN HEMT with improved ohmic contacts

被引：64
|
作者：
Cai, SJ [1 ]
Li, R [1 ]
Chen, YL [1 ]
Wong, L [1 ]
Wu, WG [1 ]
Thomas, SG [1 ]
Wang, KL [1 ]
机构：
[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 24期
关键词：
D O I：
10.1049/el:19981618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Omega.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Omega.mm, corresponding to a contact resistance of 5.38 x 10(-8)Omega.cm(2). The fabricated high electron mobility transistors with a 0.25 mu m length gate exhibit a cutoff frequency f(T) of 60 GHz and an f(max) of 100 GHz.
引用
收藏
页码：2354 / 2356
页数：3
相关论文
共 50 条
  • [1] Electrical and Microstructural Characteristics of Ohmic Contacts formation on AlGaN/GaN HEMT
    Romero, M. F.
    Jimenez, A.
    Palacio, C.
    Diaz, D.
    Munoz, E.
    PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 258 - +
  • [2] Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing
    Hou, Mingchen
    Xie, Gang
    Sheng, Kuang
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (08) : 1137 - 1140
  • [3] Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 °C by Ohmic contact recess etching
    Lau, W. S.
    Tan, J. B. H.
    Singh, B. P.
    MICROELECTRONICS RELIABILITY, 2009, 49 (05) : 558 - 561
  • [4] High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts
    Chu, KK
    Murphy, MJ
    Burm, J
    Schaff, WJ
    Eastman, LF
    Botchkarev, A
    Tang, HP
    Morkoc, H
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 427 - 430
  • [5] High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts
    Chu, KK
    Murphy, MJ
    Burm, J
    Schaff, WJ
    Eastman, LF
    Botchkarev, A
    Tang, HP
    Morkoc, H
    IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 399 - 406
  • [6] High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts
    Chu, KK
    Murphy, MJ
    Burm, J
    Schaff, WJ
    Eastman, LF
    Botchkarev, A
    Tang, HP
    Morkoc, H
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 427 - 430
  • [7] The Effect of Technological Factors on the Characteristics of Ohmic Contacts of the Power AlGaN/GaN/SiC-HEMT
    Enisherlova K.L.
    Medvedev B.K.
    Temper E.M.
    Korneev V.I.
    Russian Microelectronics, 2019, 48 (08) : 564 - 575
  • [8] Fabrication and Performance of Ti/Al/Ni/TiN Au-Free Ohmic Contacts for Undoped AlGaN/GaN HEMT
    Li, Xianhui
    Gao, Sheng
    Zhou, Quanbin
    Liu, Xiaoyi
    Hu, Wenlong
    Wang, Hong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (05) : 1959 - 1964
  • [9] Characterization of Ohmic contacts on GaN/AlGaN heterostructures
    Kaciulis, S.
    Pandolfi, L.
    Viticoli, S.
    Peroni, M.
    Passaseo, A.
    APPLIED SURFACE SCIENCE, 2006, 253 (03) : 1055 - 1064
  • [10] Characterization of recessed Ohmic contacts to AlGaN/GaN
    Hajlasz, M.
    Donkers, J. J. T. M.
    Sque, S. J.
    Heil, S. B. S.
    Gravesteijn, D. J.
    Rietveld, F. J. R.
    Schmitz, J.
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS 2015), 2015, : 158 - 162
12345