High performance AlGaN/GaN HEMT with improved ohmic contacts

被引：64
|
作者：
Cai, SJ [1 ]
Li, R [1 ]
Chen, YL [1 ]
Wong, L [1 ]
Wu, WG [1 ]
Thomas, SG [1 ]
Wang, KL [1 ]
机构：
[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 24期
关键词：
D O I：
10.1049/el:19981618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Omega.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Omega.mm, corresponding to a contact resistance of 5.38 x 10(-8)Omega.cm(2). The fabricated high electron mobility transistors with a 0.25 mu m length gate exhibit a cutoff frequency f(T) of 60 GHz and an f(max) of 100 GHz.
引用
收藏
页码：2354 / 2356
页数：3
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