High performance AlGaN/GaN HEMT with improved ohmic contacts

被引：64

作者：

Cai, SJ ^{[1
]}

Li, R ^{[1
]}

Chen, YL ^{[1
]}

Wong, L ^{[1
]}

Wu, WG ^{[1
]}

Thomas, SG ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 24期

关键词：

D O I：

10.1049/el:19981618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Omega.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Omega.mm, corresponding to a contact resistance of 5.38 x 10(-8)Omega.cm(2). The fabricated high electron mobility transistors with a 0.25 mu m length gate exhibit a cutoff frequency f(T) of 60 GHz and an f(max) of 100 GHz.

引用

页码：2354 / 2356

页数：3

共 50 条

[21] Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures
Yadav, Yogendra Kumar
Upadhyay, Bhanu B.
Meer, Mudassar
Ganguly, Swaroop
Saha, Dipankar
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (09):
[22] Influence of ohmic contact resistance on transconductance in AlGaN/GaN HEMT
Hirose, Yoshikazu
Honshio, Akira
Kawashima, Takeshi
Iwaya, Motoaki
Kamiyama, Satoshi
Tsuda, Michinobu
Amano, Hiroshi
Akasaki, Isamu
IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (07): : 1064 - 1067
[23] STUDY OF INTERFACE OF OHMIC CONTACTS TO ALGAN/GAN HETEROSTRUCTURE
Prazmowska, Joanna
Macherzynski, Wojciech
Paszkiewcz, Regina
ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2016, 14 (02) : 212 - 217
[24] TEM assessment of GaN/AlGaN/TiAlTiAu ohmic contacts
Fay, MW
Harrison, I
Birbeck, JC
Hughes, BT
Uren, MJ
Martin, T
Brown, PD
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 345 - 348
[25] ION IMPLANTED OHMIC CONTACTS TO AlGaN/GaN STRUCTURES
Boratynski, Boguslaw
Macherzynski, Wojciech
Drozdziel, Andrzej
Pyszniak, Krzysztof
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2009, 60 (05): : 273 - 275
[26] Fabrication of AlGaN/GaN HEMT with the improved ohmic contact by encapsulation of silicon dioxide thin film
Heo, Jong-Gon
Sung, Ho-Kun
Lim, Jong-Won
Kim, Shin-Keun
Park, Won-Kyu
Ko, Chul-Gi
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010,
[27] High and low temperature behavior of Ohmic contacts to AlGaN/GaN heterostructures with a thin GaN cap
Miller, M. A.
Mohney, S. E.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 1883 - 1886
[28] Optimization of AlGaN/GaN HEMT performance
Javorka, P
Wolter, M
Alam, A
Fox, A
Marso, M
Heuken, M
Kordos, P
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2001, : 31 - 36
[29] A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance
Yu, Guohao
Cai, Yong
Wang, Yue
Dong, Zhihua
Zeng, Chunhong
Zhao, Desheng
Qin, Hua
Zhang, Baoshun
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) : 747 - 749
[30] High performance of AlGaN/GaN HEMT with AlN cap layer
Luo, Xin
Cui, Peng
Zhang, Tieying
Yan, Xinkun
Chen, Siheng
Wang, Liu
Dai, Jiacheng
Linewih, Handoko
Lin, Zhaojun
Xu, Xiangang
Han, Jisheng
MICRO AND NANOSTRUCTURES, 2025, 198

← 1 2 3 4 5 →