High performance AlGaN/GaN HEMT with improved ohmic contacts

被引：64

作者：

Cai, SJ ^{[1
]}

Li, R ^{[1
]}

Chen, YL ^{[1
]}

Wong, L ^{[1
]}

Wu, WG ^{[1
]}

Thomas, SG ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Device Res Lab, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 24期

关键词：

D O I：

10.1049/el:19981618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Omega.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Omega.mm, corresponding to a contact resistance of 5.38 x 10(-8)Omega.cm(2). The fabricated high electron mobility transistors with a 0.25 mu m length gate exhibit a cutoff frequency f(T) of 60 GHz and an f(max) of 100 GHz.

引用

页码：2354 / 2356

页数：3

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