An improved DRBL AlGaN/GaN HEMT with high power added efficiency

被引：9
|
作者：
Jia, Hujun [1 ]
Zhu, Shunwei [1 ]
Hu, Mei [1 ]
Tong, Yibo [1 ]
Li, Tao [1 ]
Yang, Yintang [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Shaanxi, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2019年 / 89卷
基金：
中国国家自然科学基金;
关键词：
GaN; HEMT; IDRBL structure; Power added efficiency;
D O I：
10.1016/j.mssp.2018.09.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved DRBL AlGaN/GaN HEMT (IDRBL HEMT) with high power added efficiency is proposed and its mechanism is studied by co-simulation of ADS and TCAD software. The barrier layer on both sides of the gate of the new structure has a recessed layer. The simulation results show that the optimized IDRBL HEMT has a large breakdown voltage, a small gate-source capacitance and a large power added efficiency. The maximum PAE obtained from IDRBL HEMT was 53.30%, while the PAE of DRBL HEMT was 36.02%. Therefore, the HEMT of the IDRBL structure has great application prospects in the microwave and radio frequency fields.
引用
收藏
页码：212 / 215
页数：4
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