Annealing of paramagnetic defects introduced in SIMOX by ion implantation

被引：0

作者：

Suzuki, A ^{[1
]}

Yamaguchi, M ^{[1
]}

Nakamura, H ^{[1
]}

Izumi, T ^{[1
]}

Kakizaki, Y ^{[1
]}

Onda, T ^{[1
]}

Hara, T ^{[1
]}

机构：

[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 25912, Japan

来源：

REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16 | 1997年

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects produced in the top Si layer of silicon on insulator (SOI) by As+ implantation has been investigated, using electron spin resonance (ESR) method. We observed two kinds of ESR centers. One had a g-value of 2.0054, Delta H-pp=6.5 Oe, which originated from Si dangling bond in amorphous layer (a-center). The other had a g-value of 2.0010, Delta H-pp=4.5 Oe, which is due to E'-center in SiO2 layer. The g-value of the a-center shifted from 2.0054 to 2.0045 at the annealing temperature above 700 degrees C.

引用

页码：147 / 152

页数：6

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