Annealing of paramagnetic defects introduced in SIMOX by ion implantation

被引：0
|
作者：
Suzuki, A [1 ]
Yamaguchi, M [1 ]
Nakamura, H [1 ]
Izumi, T [1 ]
Kakizaki, Y [1 ]
Onda, T [1 ]
Hara, T [1 ]
机构：
[1] Tokai Univ, Dept Elect, Hiratsuka, Kanagawa 25912, Japan
来源：
REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16 | 1997年
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O59 [应用物理学];
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摘要：
Defects produced in the top Si layer of silicon on insulator (SOI) by As+ implantation has been investigated, using electron spin resonance (ESR) method. We observed two kinds of ESR centers. One had a g-value of 2.0054, Delta H-pp=6.5 Oe, which originated from Si dangling bond in amorphous layer (a-center). The other had a g-value of 2.0010, Delta H-pp=4.5 Oe, which is due to E'-center in SiO2 layer. The g-value of the a-center shifted from 2.0054 to 2.0045 at the annealing temperature above 700 degrees C.
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页码：147 / 152
页数：6
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