Annealing effect on boron high-energy-ion-implantation-induced defects in Si

被引：0
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作者：
Hsu, Wei-Cheng [1 ]
Liang, Mong-Song [2 ]
Chen, Shih-Chang [2 ]
Chen, Mao-Chieh [1 ]
机构：
[1] Dept. of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
[2] Taiwan Semiconduct. Mfg. Company, Science-Based Industrial Park, Hsinchu 300, Taiwan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 8 A期
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页码：5231 / 5234
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