Advanced microwave ion source for 100mA-class SIMOX ion implantation

被引：0
|
作者：
Tokiguchi, K
Seki, T
Amemiya, K
Yamashita, Y
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To produce SIMOX wafers with high throughput, a compact and long lifetime microwave ion source for 100mA-class oxygen ion implantation was newly developed. The ion source operated stably for more than 3 months with no maintenance under the beam extraction condition of 150 mA at 50 kV. When the source was installed in a SIMOX ion implanter, operation test showed that the ion source is suited to 100mA-class ion implantation, giving volume production of high quality SIMOX wafers.
引用
收藏
页码：287 / 290
页数：4
相关论文
共 50 条
  • [1] Microwave ion source with permanent magnet for 100 keV ion implantation
    Ming, Jianchuan
    Guo, Qiqian
    Wang, Jinhui
    Zhao, Weijiang
    Bai, Yulan
    Zhu, Qiliang
    Ding, Jia
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (03):
  • [2] Microwave ion source for next generation SIMOX ion implanter
    Tokiguchi, K
    Seki, T
    Amemiya, K
    Arimatsu, K
    Hashimoto, I
    PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 104 - 109
  • [3] Arsenic ion implantation into SIMOX
    Onda, T
    Atumi, N
    Hasegawa, Y
    Watanabe, T
    Kakizaki, Y
    Hara, T
    Kaneko, S
    Naka, T
    Sakiyama, K
    REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO 14, MARCH 1996, 1996, : 105 - 110
  • [4] MICROWAVE ION-SOURCE FOR ION-IMPLANTATION
    SAKUDO, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 168 - 177
  • [5] EMITTANCES OF A MICROWAVE ION-SOURCE FOR IMPLANTATION
    SAKUDO, N
    KOIKE, H
    TOKIGUCHI, K
    SEKI, T
    SAKAI, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 184 - 188
  • [6] SIMOX - A NEW CHALLENGE FOR ION-IMPLANTATION
    AUBERTONHERVE, A
    WITTKOWER, A
    ASPAR, B
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 420 - 424
  • [7] A HIGH-CURRENT MICROWAVE ION-SOURCE FOR ION-IMPLANTATION
    WALTHER, SR
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (04): : 2562 - 2564
  • [8] 100 MA LOW EMITTANCE ION-SOURCE FOR ION-BEAM FUSION
    VAHRENKAMP, RP
    SELIGER, RL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (02): : 195 - 195
  • [9] The effects of fluorine ion implantation on the formation of SIMOX structure
    Zhu, SY
    Lin, CL
    THIN SOLID FILMS, 1997, 298 (1-2) : 147 - 150
  • [10] Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut
    Xiang Lu
    S. Sundar Kumar Iyer
    Jin Lee
    Brian Doyle
    Zhineng Fan
    Paul K. Chu
    Chenming Hu
    Nathan W. Cheung
    Journal of Electronic Materials, 1998, 27 : 1059 - 1066
12345