Advanced microwave ion source for 100mA-class SIMOX ion implantation

被引：0
|
作者：
Tokiguchi, K
Seki, T
Amemiya, K
Yamashita, Y
机构：
来源：
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
To produce SIMOX wafers with high throughput, a compact and long lifetime microwave ion source for 100mA-class oxygen ion implantation was newly developed. The ion source operated stably for more than 3 months with no maintenance under the beam extraction condition of 150 mA at 50 kV. When the source was installed in a SIMOX ion implanter, operation test showed that the ion source is suited to 100mA-class ion implantation, giving volume production of high quality SIMOX wafers.
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页码：287 / 290
页数：4
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