Breakdown enhancement in silicon nanowire p-n junctions

被引：23

作者：

Agarwal, P. ^{[1
]}

Vijayaraghavan, M. N. ^{[1
]}

Neuilly, F. ^{[1
]}

Hijzen, E. ^{[1
]}

Hurkx, G. A. M. ^{[1
]}

机构：

[1] NXP Semicond, B-3001 Louvain, Belgium

来源：

NANO LETTERS | 2007年 / 7卷 / 04期

关键词：

D O I：

10.1021/nl062681n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximate to 10(-7) Omega cm(2). Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits.

引用

页码：896 / 899

页数：4

共 50 条

[21] EFFECTIVE CARRIER IONIZATION COEFFICIENT IN SILICON P-N JUNCTIONS AT BREAKDOWN
HALL, R
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 22 (06) : 521 - &
[22] TEMPERATURE DEPENDENCE OF BREAKDOWN VOLTAGE IN SILICON ABRUPT P-N JUNCTIONS
CHANG, CY
CHIU, SS
HSU, LP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) : 391 - &
[23] Local Current Measurements for Avalanche Breakdown in Silicon p-n Junctions
Ding, Y.
Poenar, D. P.
Isakov, D. V.
[J]. 2012 19TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2012,
[24] BREAKDOWN PHENOMENA IN SILICON P-N JUNCTIONS UNDER MAGNETIC FIELD
MEHTA, SC
PARSHAD, R
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (02) : 760 - &
[25] CAUSES OF LOWERING OF BREAKDOWN VOLTAGE OF PLANAR P-N JUNCTIONS IN SILICON
MARASANO.VA
PASHINTS.YI
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (08): : 1013 - &
[26] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS
GROVE, AS
LEISTIKO, O
HOOPER, WW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +
[27] Modeling of fast ionization waves in silicon p-n junctions under breakdown
KardoSysoev, AF
Popova, MV
[J]. SEMICONDUCTORS, 1996, 30 (05) : 431 - 435
[28] EDGE BREAKDOWN OF P-N JUNCTIONS IN GERMANIUM
VUL, BM
SHOTOV, AP
[J]. SOVIET PHYSICS-TECHNICAL PHYSICS, 1957, 2 (10): : 2031 - 2036
[29] Electric breakdown in GaN p-n junctions
Dmitriev, VA
Irvine, KG
Carter, CH
Kuznetsov, NI
Kalinina, EV
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (02) : 229 - 231
[30] TIME CHARACTERISTICS OF SURFACE BREAKDOWN OF DEEP DIFFUSED P-N JUNCTIONS IN SILICON
MAGOMEDO.MA
ISAEV, MR
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (07): : 1202 - +

← 1 2 3 4 5 →