Breakdown enhancement in silicon nanowire p-n junctions

被引：23

作者：

Agarwal, P. ^{[1
]}

Vijayaraghavan, M. N. ^{[1
]}

Neuilly, F. ^{[1
]}

Hijzen, E. ^{[1
]}

Hurkx, G. A. M. ^{[1
]}

机构：

[1] NXP Semicond, B-3001 Louvain, Belgium

来源：

NANO LETTERS | 2007年 / 7卷 / 04期

关键词：

D O I：

10.1021/nl062681n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We demonstrate highly reproducible silicon nanowire diodes fabricated with a fully VLSI compatible etching technology, with diameters down to 30 nm. A contact technology based on recrystallized polysilicon enables specific contact resistances as low as rho approximate to 10(-7) Omega cm(2). Our devices show a strongly diameter-dependent breakdown voltage at reverse bias, which we explain in terms of the influence of the surrounding dielectric. We suggest that this technology is suitable for incorporating nanowire-based functionalities into future integrated circuits.

引用

页码：896 / 899

页数：4

共 50 条

[41] Analysis of electroluminescence spectra of silicon and gallium arsenide p-n junctions in avalanche breakdown
Lahbabi, M
Ahaitouf, A
Fliyou, M
Abarkan, E
Charles, JP
Bath, A
Hoffmann, A
Kerns, SE
Kerns, DV
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (04) : 1822 - 1828
[42] BREAKDOWN EFFECT IN P-N ALLOY GERMANIUM JUNCTIONS
KNOTT, RD
COLSON, ID
YOUNG, MRP
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (03): : 182 - 185
[43] ELECTRIC BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS
NASLEDOV, DN
TSARENKOV, BV
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 5 (04): : 862 - 867
[44] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS
HALL, R
LECK, JH
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) : 529 - &
[45] AVALANCHE-THERMAL BREAKDOWN OF P-N JUNCTIONS
MARTIROSOV, IM
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 899 - +
[46] BREAKDOWN VOLTAGE OF CYLINDRICAL GAUSSIAN P-N JUNCTIONS
VINCENT, DA
ROMBEEK, H
THOMAS, RE
SIRSI, RM
BOOTHROYD, AR
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (12) : 1193 - +
[47] PHOTO-INDUCED BREAKDOWN IN P-N JUNCTIONS
JOSEPHS, HC
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09): : 1247 - &
[48] AVALANCHE BREAKDOWN IN EPITAXIAL SIC P-N JUNCTIONS
VANOPDORP, C
VRAKKING, J
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2320 - +
[49] MICROPLASMA-BREAKDOWN OF GERMANIUM P-N JUNCTIONS
SHAPOVALOV, VP
KUCHIN, VD
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (06): : 141 - +
[50] NEUTRON IRRADIATION OF SILICON P-N JUNCTIONS
NOSOV, YR
[J]. SOVIET PHYSICS-SOLID STATE, 1963, 4 (12): : 2680 - 2680

← 1 2 3 4 5 →