DimNoC: A Dim Silicon Approach towards Power-Efficient On-Chip Network

被引:12
|
作者
Zhan, Jia [1 ]
Ouyang, Jin [2 ]
Ge, Fen [3 ]
Zhao, Jishen [4 ]
Xie, Yuan [1 ]
机构
[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
[2] NVIDIA Corp, Santa Clara, CA USA
[3] Nanjing Univ Aeronaut & Astronaut, Nanjing, Jiangsu, Peoples R China
[4] Univ Calif Santa Cruz, Santa Cruz, CA 95064 USA
关键词
Performance; Design; Network-on-Chip; Dark Silicon; STT-RAM; INTERCONNECT; PERFORMANCE; VOLTAGE; ENERGY; MODEL;
D O I
10.1145/2744769.2744824
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The diminishing momentum of Dennard scaling leads to the ever increasing power density of integrated circuits, and a decreasing portion of transistors on a chip that can be switched on simultaneously-a problem recently discovered and known as dark silicon. There has been innovative work to address the "dark silicon" problem in the fields of power-efficient core and cache system. However, dark silicon challenges with Network-on-Chip (NoC) are largely unexplored. To address this issue, we propose DimNoC, a "dim silicon" approach, which leverages drowsy SRAM and STT-RAM technologies to replace pure SRAM-based NoC buffers. Specifically, we propose two novel hybrid buffer architectures: 1) a Hierarchical Buffer (HB) architecture, which divides the input buffers into a hierarchy of levels with different memory technologies operating at various power states; 2) a Banked Buffer (BB) architecture, which organizes drowsy SRAM and STT-RAM into separate banks in order to hide the long write-latency of STT-RAM. Our experiments show that the proposed DimNoC can achieve 30.9% network energy saving, 20.3% energy-delay product (EDP) reduction, and 7.6% router area decrease compared with the baseline SRAM-based NoC design.
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页数:6
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