Design and analysis of a 34 dBm ka-band GaN high power amplifier MMIC

被引：0
|
作者：
van Heijningen, M. [1 ]
van Vliet, F. E. [1 ]
Quay, R. [2 ]
van Raay, F. [2 ]
Seelmann-Eggebert, M. [2 ]
机构：
[1] TNO Def Secur & Safety TNO D&V, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
GaN; MMIC power amplifiers;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers,,with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures.
引用
收藏
页码：75 / +
页数：2
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