A Design of Ka-band GaAs PHEMT Power Amplifier MMIC

被引：0
|
作者：
Li Weizhong [1 ]
Peng Longxin [1 ]
机构：
[1] Nanjing Elect Device Inst, Natl Key Lab Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China
来源：
ISAPE 2008: THE 8TH INTERNATIONAL SYMPOSIUM ON ANTENNAS, PROPAGATION AND EM THEORY, PROCEEDINGS, VOLS 1-3 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design of a Ka-band power amplifier is presented. The three-stage amplifier exhibits an output power of 0.5 watt with small signal gain above 16dB across the 32 GHz to 34 GHz band. The amplifier is characterized using linear and nonlinear methods. The stability, especially odd mode stability, is carefully considered. Both schematic and EM simulation results are shown.
引用
收藏
页码：1077 / 1080
页数：4
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