A 20-Watt Ka-Band GaN High Power Amplifier MMIC

被引：0

作者：

Ng, C. Y. ^{[1
]}

Takagi, K. ^{[1
]}

Senju, T. ^{[1
]}

Matsushita, K. ^{[1
]}

Sakurai, H. ^{[1
]}

Onodera, K. ^{[1
]}

Nakanishi, S. ^{[1
]}

Kuroda, K. ^{[1
]}

Soejima, T. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Saiwai Ku, Kawasaki, Kanagawa 2128581, Japan

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

Gallium Nitride; MMIC; power amplifiers; millimeter wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ka-band high power amplifier MMIC developed from 0.18 mu m gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured on-wafer across 29GHz to 31GHz under pulsed bias condition. At VDD=28V, the MMIC achieved an output power of 19W to 21W. To the authors' best knowledge, this is the highest output power ever reported for GaN high power amplifier MMIC at Ka-band. The 2-stage amplifier GaN MMIC has 10dB linear gain and a die-size of 4.0mm x 5.5mm. The MMIC can realize high power Solid-State Power Amplifier (SSPA) for Ka-band.

引用

页码：404 / 407

页数：4

共 50 条

[1] A 20-Watt Ka-Band GaN High Power Amplifier MMIC
Ng, C. Y.
Takagi, K.
Senju, T.
Matsushita, K.
Sakurai, H.
Onodera, K.
Nakanishi, S.
Kuroda, K.
Soejima, T.
[J]. 2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1348 - 1351
[2] 4-Watt Ka-band AlGaN/GaN power amplifier MMIC
Darwish, A. M.
Boutros, K.
Luo, B.
Huebschman, B.
Viveiros, E.
Hung, H. A.
[J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 730 - 733
[3] A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
Noh, Youn Sub
Yom, In Bok
[J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (08) : 619 - 621
[4] A Ka-band GaN High Power Amplifier
Kim Phan
Cong Mai
Lee, Sanghun
Cuong Huynh
[J]. 2019 INTERNATIONAL SYMPOSIUM ON ELECTRICAL AND ELECTRONICS ENGINEERING (ISEE 2019), 2019, : 19 - 22
[5] Miniaturization of Ka-band High Power Amplifier by 0.15 μm GaN MMIC Technology
Kong, Kris
Kao, Ming-Yih
Nayak, Sabyasachi
[J]. 2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,
[6] Design and analysis of a 34 dBm ka-band GaN high power amplifier MMIC
van Heijningen, M.
van Vliet, F. E.
Quay, R.
van Raay, F.
Seelmann-Eggebert, M.
[J]. 2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, 2006, : 75 - +
[7] A Ka-band HBT MMIC power amplifier
Tanaka, S
Yamanouchi, S
Amamiya, Y
Niwa, T
Hosoya, K
Shimawaki, H
Honjo, K
[J]. 2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, : 553 - 556
[8] A Ka-band 22 dBm GaN amplifier MMIC
Wang Dongfang
Chen Xiaojuan
Yuan Tingting
Wei Ke
Liu Xinyu
[J]. JOURNAL OF SEMICONDUCTORS, 2011, 32 (08)
[9] A Ka-band 22 dBm GaN amplifier MMIC
王东方
陈晓娟
袁婷婷
魏珂
刘新宇
[J]. Journal of Semiconductors, 2011, 32 (08) : 128 - 131
[10] A balanced 2 watt compact PHEMT power amplifier MMIC for Ka-band applications
Chen, SQ
Reese, E
Kong, KS
[J]. 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 847 - 850

← 1 2 3 4 5 →