A 20-Watt Ka-Band GaN High Power Amplifier MMIC

被引：0

作者：

Ng, C. Y. ^{[1
]}

Takagi, K. ^{[1
]}

Senju, T. ^{[1
]}

Matsushita, K. ^{[1
]}

Sakurai, H. ^{[1
]}

Onodera, K. ^{[1
]}

Nakanishi, S. ^{[1
]}

Kuroda, K. ^{[1
]}

Soejima, T. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Saiwai Ku, Kawasaki, Kanagawa 2128581, Japan

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

Gallium Nitride; MMIC; power amplifiers; millimeter wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ka-band high power amplifier MMIC developed from 0.18 mu m gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured on-wafer across 29GHz to 31GHz under pulsed bias condition. At VDD=28V, the MMIC achieved an output power of 19W to 21W. To the authors' best knowledge, this is the highest output power ever reported for GaN high power amplifier MMIC at Ka-band. The 2-stage amplifier GaN MMIC has 10dB linear gain and a die-size of 4.0mm x 5.5mm. The MMIC can realize high power Solid-State Power Amplifier (SSPA) for Ka-band.

引用

页码：404 / 407

页数：4

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