GaN MMIC for Ka-Band with 18W

被引：0

作者：

Takagi, K. ^{[1
]}

Ng, C. Y. ^{[1
]}

Sakurai, H. ^{[1
]}

Matsushita, K. ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microwave Solid State Engn Dept, Saiwai Ku, Komukai Complex,1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128581, Japan

来源：

2015 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS) | 2015年

关键词：

Gallium Nitride; MMIC; power amplifiers; millimeter wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Ka-band high power amplifier MMIC developed from a robust process of 0.2 mu m gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured across 29 to 31GHz under pulsed bias condition. At VDD=28V, The MMIC chip achieved a power added efficiency of 17% with an output power of 18W. The 2-stage amplifier GaN MMIC has 10.2dB linear gain and a die-size of 4.0mm x 5.5mm. The MMIC can realize high power Solid-State Power Amplifier.

引用

页数：4

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