A Ka-band 22 dBm GaN amplifier MMIC

被引：0
|
作者：
王东方 [1 ]
陈晓娟 [1 ]
袁婷婷 [1 ]
魏珂 [1 ]
刘新宇 [1 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2011年 / 32卷 / 08期
基金：
中国国家自然科学基金;
关键词：
GaN; MMIC; AlGaN/GaN HEMT; amplifier; Ka band; CPW;
D O I：
暂无
中图分类号：
TN722 [放大器];
学科分类号：
080902 ;
摘要：
A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under V;=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of V;=10 V.
引用
收藏
页码：128 / 131
页数：4
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