4-Watt Ka-band AlGaN/GaN power amplifier MMIC

被引：13
|
作者：
Darwish, A. M. [1 ]
Boutros, K. [2 ]
Luo, B. [2 ]
Huebschman, B. [1 ]
Viveiros, E. [1 ]
Hung, H. A. [1 ]
机构：
[1] USA, Res Lab, 2800 Powder Mill Rd, Adelphi, MD 20783 USA
[2] Rockwell Sci Co LLC, Thousand Oaks, CA 91360 USA
来源：
2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年
关键词：
D O I：
10.1109/MWSYM.2006.249737
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A broadband Ka-band AlGaN/GaN on SiC HEMT power amplifier MAC was developed for millimeter-wave antenna applications. The output stage is composed of a 1.2-mm-wide device with 0.18 mu m gate length. The two-stage 50-ohm matched MMIC produces 13 +/- 1 dB of gain from 26 GHz to 36 GHz. At 35 GHz, the measured CW saturated output power was 4 W, indicating a power density of 3.3 W/mm. The power added efficiency was 23%. Across the band, the measured CW output power was > 2 W. While individual (or partially matched single stage) devices have been demonstrated with good output power, to the best of our knowledge, this is the first report of a 10GHz-bandwidth Ka-band GaN MMIC with high output power, gain, and return loss.
引用
收藏
页码：730 / 733
页数：4
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