Design and analysis of a 34 dBm ka-band GaN high power amplifier MMIC

被引：0

作者：

van Heijningen, M. ^{[1
]}

van Vliet, F. E. ^{[1
]}

Quay, R. ^{[2
]}

van Raay, F. ^{[2
]}

Seelmann-Eggebert, M. ^{[2
]}

机构：

[1] TNO Def Secur & Safety TNO D&V, Oude Waalsdorperweg 63, NL-2597 AK The Hague, Netherlands

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

GaN; MMIC power amplifiers;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers,,with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures.

引用

页码：75 / +

页数：2

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