Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells

被引：1
|
作者：
Golaszewska, K.
Kaminska, E.
Piotrowska, A.
Rutkowski, J.
Kruszka, R.
Kowalczyk, E.
Papis, E.
Wawro, A.
Piotrowski, T. T.
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Mil Univ Technol, Inst Appl Phys, PL-00908 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 04期
关键词：
D O I：
10.1002/pssa.200674149
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO4 used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO4 were formed in a reactive process in Ar-O-2 atmosphere, from Cd and Ru1Si1 targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO4 transparent films instead of conventional metal-based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D* increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1051 / 1055
页数：5
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